PART |
Description |
Maker |
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
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Samsung Electronic
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K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C1200C KM416V1200C KM416V1000C KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out 256 × 16Bit的CMOS动态RAM的扩展数据输
|
Samsung Semiconductor Co., Ltd.
|
V53C16126H V53C16126HK35 V53C16126HK60 V53C16126HT |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM DRAM|FAST PAGE|128KX16|CMOS|SOJ|40PIN|PLASTIC 内存|快速页面| 128KX16 |的CMOS | SOJ | 40PIN |塑料 High performance 128K x 16bit fast page mode CMOS dynamic RAM
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Mosel Vitelic Corp Mosel Vitelic Corp Mosel Vitelic, Corp.
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K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4E661612C-TC K4E641612C-TC50 K4E641612C-TC60 K4E6 |
CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG58C/U COAX; 36" CABLE LENGTH; 4M x 16bit CMOS Dynamic RAM with Extended Data Out 4米16位的CMOS动态随机存储器的扩展数据输
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http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM48V8100B |
8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8浣?CMOS ?ㄦ?RAM(甯?揩??〉妯″?))
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SAMSUNG SEMICONDUCTOR CO. LTD.
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